Charge transport study in a low-temperature conductance of C60 field-effect tran- sistor
نویسندگان
چکیده
A variable range hopping (VRH) transport has been observed in a low-temperature conductance of C60 field-effect transistor (C60FET). It appears below 100 K in place of a nearest neighbor hopping transport. We have investigated various C60FETs fabricated by several thermal annealing conditions and source-drain separations. Disorder states in the pseudo-gap of C60FET can be controlled by the thermal annealing in terms of crystalline growth of C60. There seems to be located strong charge trapping states at the interface with gate dielectric in the C60FET, which can be eliminated by the thermal annealing. The source-drain separation affects the VRH behavior, but it may modulate the interfacial transport property around source-drain electrodes.
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